Infineon Technologies - IPP65R150CFDXKSA1

KEY Part #: K6417015

IPP65R150CFDXKSA1 Pricing (USD) [22921PC Stock]

  • 1 pcs$1.64822
  • 10 pcs$1.47238
  • 100 pcs$1.20725
  • 500 pcs$0.92744
  • 1,000 pcs$0.78218

Nimewo Pati:
IPP65R150CFDXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 650V 22.4A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP65R150CFDXKSA1 Atribi pwodwi yo

Nimewo Pati : IPP65R150CFDXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 650V 22.4A TO220
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 150 mOhm @ 9.3A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 900µA
Chaje Gate (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2340pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 195.3W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3
Pake / Ka : TO-220-3