Vishay Semiconductor Diodes Division - BYW36-TAP

KEY Part #: K6454512

BYW36-TAP Pricing (USD) [445338PC Stock]

  • 1 pcs$0.08347
  • 25,000 pcs$0.08305

Nimewo Pati:
BYW36-TAP
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 600V 2A SOD57. Rectifiers 2.0 Amp 600 Volt 50 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYW36-TAP electronic components. BYW36-TAP can be shipped within 24 hours after order. If you have any demands for BYW36-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYW36-TAP Atribi pwodwi yo

Nimewo Pati : BYW36-TAP
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 600V 2A SOD57
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 200ns
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : SOD-57, Axial
Pake Aparèy Founisè : SOD-57
Operating Tanperati - Junction : -55°C ~ 175°C

Ou ka enterese tou
  • SBRD10200TR

    SMC Diode Solutions

    DIODE SCHOTTKY 200V 10A DPAK.

  • SE20FGHM3/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.7A DO219AB. Rectifiers 2A,400V ESD PROTECTION, SMF RECT

  • ES07B-GS18

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.2A DO219AB. Rectifiers 100 Volt 0.7A 25ns 30 Amp IFSM

  • BYM11-400-E3/97

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1A DO213AB. Rectifiers 400 Volt 1.0A 150ns Glass Passivated

  • BYM10-200-E3/97

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1A DO213AB. Rectifiers 200 Volt 1.0 Amp Glass Passivated

  • BYM10-400-E3/97

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1A DO213AB. Rectifiers 400 Volt 1.0 Amp Glass Passivated