Vishay Semiconductor Diodes Division - VS-GB300NH120N

KEY Part #: K6533218

VS-GB300NH120N Pricing (USD) [562PC Stock]

  • 1 pcs$82.66282
  • 12 pcs$78.72665

Nimewo Pati:
VS-GB300NH120N
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
IGBT 1200V 500A 1645W INT-A-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-GB300NH120N electronic components. VS-GB300NH120N can be shipped within 24 hours after order. If you have any demands for VS-GB300NH120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB300NH120N Atribi pwodwi yo

Nimewo Pati : VS-GB300NH120N
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT 1200V 500A 1645W INT-A-PAK
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 500A
Pouvwa - Max : 1645W
Vce (sou) (Max) @ Vge, Ic : 2.45V @ 15V, 300A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 21.2nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Double INT-A-PAK (3 + 4)
Pake Aparèy Founisè : Double INT-A-PAK

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