Infineon Technologies - IRF6723M2DTRPBF

KEY Part #: K6524119

[3939PC Stock]


    Nimewo Pati:
    IRF6723M2DTRPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET 2N-CH 30V 15A DIRECTFET.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays and Diodes - Bridge rèktifikateur ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRF6723M2DTRPBF electronic components. IRF6723M2DTRPBF can be shipped within 24 hours after order. If you have any demands for IRF6723M2DTRPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF6723M2DTRPBF Atribi pwodwi yo

    Nimewo Pati : IRF6723M2DTRPBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET 2N-CH 30V 15A DIRECTFET
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A
    RD sou (Max) @ Id, Vgs : 6.6 mOhm @ 15A, 10V
    Vgs (th) (Max) @ Id : 2.35V @ 25µA
    Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : 1380pF @ 15V
    Pouvwa - Max : 2.7W
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : DirectFET™ Isometric MA
    Pake Aparèy Founisè : DIRECTFET™ MA