Rohm Semiconductor - QS8M12TCR

KEY Part #: K6525414

QS8M12TCR Pricing (USD) [299987PC Stock]

  • 1 pcs$0.13631
  • 3,000 pcs$0.13563

Nimewo Pati:
QS8M12TCR
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET N/P-CH 30V 4A TSMT8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor QS8M12TCR electronic components. QS8M12TCR can be shipped within 24 hours after order. If you have any demands for QS8M12TCR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

QS8M12TCR Atribi pwodwi yo

Nimewo Pati : QS8M12TCR
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET N/P-CH 30V 4A TSMT8
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A
RD sou (Max) @ Id, Vgs : 42 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 3.4nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 250pF @ 10V
Pouvwa - Max : 1.5W
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SMD, Flat Lead
Pake Aparèy Founisè : TSMT8