Vishay Siliconix - IRFBG20L

KEY Part #: K6414362

[12781PC Stock]


    Nimewo Pati:
    IRFBG20L
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 1000V 1.4A TO-262.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Tiristors - SCR, Diodes - Zener - Single and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix IRFBG20L electronic components. IRFBG20L can be shipped within 24 hours after order. If you have any demands for IRFBG20L, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFBG20L Atribi pwodwi yo

    Nimewo Pati : IRFBG20L
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 1000V 1.4A TO-262
    Seri : -
    Estati Pati : Active
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 1000V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.4A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 11 Ohm @ 840mA, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 38nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 500pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : -
    Operating Tanperati : -
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I2PAK
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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