Vishay Semiconductor Diodes Division - V8PA12-M3/I

KEY Part #: K6428454

V8PA12-M3/I Pricing (USD) [478125PC Stock]

  • 1 pcs$0.07736

Nimewo Pati:
V8PA12-M3/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 120V 8A DO221BC. Schottky Diodes & Rectifiers If 8A Vrrm 120V Ifsm 100A
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - JFETs, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division V8PA12-M3/I electronic components. V8PA12-M3/I can be shipped within 24 hours after order. If you have any demands for V8PA12-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V8PA12-M3/I Atribi pwodwi yo

Nimewo Pati : V8PA12-M3/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 120V 8A DO221BC
Seri : eSMP®, TMBS®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 120V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 870mV @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 600µA @ 120V
Kapasite @ Vr, F : 700pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-221BC, SMA Flat Leads Exposed Pad
Pake Aparèy Founisè : DO-221BC (SMPA)
Operating Tanperati - Junction : -40°C ~ 150°C

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