Vishay Siliconix - SI2316DS-T1-E3

KEY Part #: K6418451

SI2316DS-T1-E3 Pricing (USD) [340497PC Stock]

  • 1 pcs$0.10863
  • 3,000 pcs$0.09778

Nimewo Pati:
SI2316DS-T1-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 30V 2.9A SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI2316DS-T1-E3 electronic components. SI2316DS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2316DS-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2316DS-T1-E3 Atribi pwodwi yo

Nimewo Pati : SI2316DS-T1-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 30V 2.9A SOT23-3
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 50 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id : 800mV @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 215pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3 (TO-236)
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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