STFW3N170 Pricing (USD) [18665PC Stock]
- 1 pcs$2.20791
- 10 pcs$1.96949
- 100 pcs$1.61490
- 500 pcs$1.30767
- 1,000 pcs$1.04630
- Nimewo Pati:
- STFW3N170
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 1700V 2.6A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - JFETs, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STFW3N170 electronic components. STFW3N170 can be shipped within 24 hours after order. If you have any demands for STFW3N170, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STFW3N170 Atribi pwodwi yo
Nimewo Pati :
STFW3N170
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 1700V 2.6A
Seri :
PowerMESH™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
13 Ohm @ 1.3A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
44nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1100pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
63W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOWATT-218FX
Pake / Ka :
ISOWATT218FX
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