[12510PC Stock]
- Nimewo Pati:
- IRLD110
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 100V 1A 4-DIP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRLD110 electronic components. IRLD110 can be shipped within 24 hours after order. If you have any demands for IRLD110, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLD110 Atribi pwodwi yo
Nimewo Pati :
IRLD110
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 100V 1A 4-DIP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 5V
RD sou (Max) @ Id, Vgs :
540 mOhm @ 600mA, 5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.1nC @ 5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
250pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.3W (Ta)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
4-DIP, Hexdip, HVMDIP
Pake / Ka :
4-DIP (0.300", 7.62mm)
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