Diodes Incorporated - DMTH3004LFGQ-7

KEY Part #: K6403623

DMTH3004LFGQ-7 Pricing (USD) [301856PC Stock]

  • 1 pcs$0.12253

Nimewo Pati:
DMTH3004LFGQ-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET BVDSS 25V-30V POWERDI333.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMTH3004LFGQ-7 electronic components. DMTH3004LFGQ-7 can be shipped within 24 hours after order. If you have any demands for DMTH3004LFGQ-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH3004LFGQ-7 Atribi pwodwi yo

Nimewo Pati : DMTH3004LFGQ-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET BVDSS 25V-30V POWERDI333
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Ta), 75A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 44nC @ 10V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 2370pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 50W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerDI3333-8
Pake / Ka : 8-PowerVDFN