Nimewo Pati :
IXD611S1T/R
Deskripsyon :
IC DRVR HALF BRIDGE 600MA 8-SOIC
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Independent
Kalite Gate :
IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou :
10V ~ 35V
Vòltaj lojik - VIL, VIH :
2.4V, 2.7V
Kouran - Peak Sòti (Sous, Lavabo) :
600mA, 600mA
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
600V
Rise / Fall Time (Tip) :
28ns, 18ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC