Vishay Semiconductor Diodes Division - VS-20ATS12-M3

KEY Part #: K6434453

VS-20ATS12-M3 Pricing (USD) [31971PC Stock]

  • 1 pcs$1.28907
  • 1,000 pcs$1.10291

Nimewo Pati:
VS-20ATS12-M3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1.2KV 20A TO220AB. Schottky Diodes & Rectifiers New Input Diodes - TO-220-e3
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-20ATS12-M3 electronic components. VS-20ATS12-M3 can be shipped within 24 hours after order. If you have any demands for VS-20ATS12-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-20ATS12-M3 Atribi pwodwi yo

Nimewo Pati : VS-20ATS12-M3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1.2KV 20A TO220AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : 20A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 20A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 100µA @ 1200V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB
Operating Tanperati - Junction : -40°C ~ 150°C

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