Vishay Siliconix - SUD09P10-195-GE3

KEY Part #: K6419799

SUD09P10-195-GE3 Pricing (USD) [228100PC Stock]

  • 1 pcs$0.16215
  • 2,000 pcs$0.15227

Nimewo Pati:
SUD09P10-195-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 100V 8.8A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUD09P10-195-GE3 Atribi pwodwi yo

Nimewo Pati : SUD09P10-195-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 100V 8.8A DPAK
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 195 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 34.8nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1055pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 32.1W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252, (D-Pak)
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63