Nimewo Pati :
SUD09P10-195-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 100V 8.8A DPAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
195 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
34.8nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1055pF @ 50V
Disipasyon Pouvwa (Max) :
2.5W (Ta), 32.1W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252, (D-Pak)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63