Nimewo Pati :
MBRH20030RL
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 30V 200A D-67
Kalite dyòd :
Schottky, Reverse Polarity
Voltage - DC Ranvèse (Vr) (Max) :
30V
Kouran - Mwayèn Rèktifye (Io) :
200A
Voltage - Forward (Vf) (Max) @ Si :
580mV @ 200A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
3mA @ 30V
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
D-67
Operating Tanperati - Junction :
-55°C ~ 150°C