Nimewo Pati :
IDM02G120C5XTMA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE SCHOTTKY 1200V 2A TO252-2
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
2A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.65V @ 2A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
18µA @ 1200V
Kapasite @ Vr, F :
182pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
PG-TO252-2
Operating Tanperati - Junction :
-55°C ~ 175°C