Nimewo Pati :
SI8481DB-T1-E1
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 20V 9.7A 4-MICROFOOT
Seri :
TrenchFET® Gen III
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
21 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
47nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
2500pF @ 10V
Disipasyon Pouvwa (Max) :
2.8W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-MICRO FOOT® (1.6x1.6)