IPS70R600P7SAKMA1 Pricing (USD) [98442PC Stock]
- 1 pcs$0.40556
- 10 pcs$0.33499
- 100 pcs$0.25830
- 500 pcs$0.19133
- 1,000 pcs$0.15307
- Nimewo Pati:
- IPS70R600P7SAKMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 700V 8.5A TO251.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPS70R600P7SAKMA1 electronic components. IPS70R600P7SAKMA1 can be shipped within 24 hours after order. If you have any demands for IPS70R600P7SAKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS70R600P7SAKMA1 Atribi pwodwi yo
Nimewo Pati :
IPS70R600P7SAKMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 700V 8.5A TO251
Seri :
CoolMOS™ P7
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
600 mOhm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 90µA
Chaje Gate (Qg) (Max) @ Vgs :
10.5nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
364pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
43W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO251-3
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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