Nimewo Pati :
SI5432DC-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 20V 6A 1206-8
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
20 mOhm @ 8.3A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
33nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1200pF @ 10V
Disipasyon Pouvwa (Max) :
2.5W (Ta), 6.3W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
1206-8 ChipFET™
Pake / Ka :
8-SMD, Flat Lead