Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 600V 1.5A SOD123W
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
1.5A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 1.5A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1µA @ 600V
Kapasite @ Vr, F :
10pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOD123W
Operating Tanperati - Junction :
-55°C ~ 175°C