Infineon Technologies - IRL7472L1TRPBF

KEY Part #: K6417880

IRL7472L1TRPBF Pricing (USD) [44701PC Stock]

  • 1 pcs$1.10346
  • 4,000 pcs$1.09797

Nimewo Pati:
IRL7472L1TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 40V 375A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRL7472L1TRPBF Atribi pwodwi yo

Nimewo Pati : IRL7472L1TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 40V 375A
Seri : StrongIRFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 375A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 0.59 mOhm @ 195A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 330nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 20082pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.8W (Ta), 341W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DIRECTFET L8
Pake / Ka : DirectFET™ Isometric L8

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