STMicroelectronics - STGW25H120F2

KEY Part #: K6422368

STGW25H120F2 Pricing (USD) [15591PC Stock]

  • 1 pcs$3.63577
  • 10 pcs$3.28321
  • 100 pcs$2.71811
  • 500 pcs$2.36689
  • 1,000 pcs$2.06148

Nimewo Pati:
STGW25H120F2
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT H-SERIES 1200V 25A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGW25H120F2 electronic components. STGW25H120F2 can be shipped within 24 hours after order. If you have any demands for STGW25H120F2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGW25H120F2 Atribi pwodwi yo

Nimewo Pati : STGW25H120F2
Manifakti : STMicroelectronics
Deskripsyon : IGBT H-SERIES 1200V 25A TO-247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 100A
Vce (sou) (Max) @ Vge, Ic : 2.6V @ 15V, 25A
Pouvwa - Max : 375W
Oblije chanje enèji : 600µJ (on), 700µJ (off)
Kalite Antre : Standard
Gate chaje : 100nC
Td (on / off) @ 25 ° C : 29ns/130ns
Kondisyon egzamen an : 600V, 25A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247