VS-GB200TH120N Pricing (USD) [197PC Stock]
- 1 pcs$234.46046
- 12 pcs$216.03837
- Nimewo Pati:
- VS-GB200TH120N
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- IGBT 1200V 360A 1136W INT-A-PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - JFETs, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VS-GB200TH120N electronic components. VS-GB200TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB200TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB200TH120N Atribi pwodwi yo
Nimewo Pati :
VS-GB200TH120N
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
IGBT 1200V 360A 1136W INT-A-PAK
Seri :
-
Estati Pati :
Active
Kalite IGBT :
-
Nou konte genyen :
Half Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
360A
Pouvwa - Max :
1136W
Vce (sou) (Max) @ Vge, Ic :
2.35V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) :
5mA
Antre kapasite (Cies) @ Vce :
14.9nF @ 25V
Antre :
Standard
NTC thermistor :
No
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Double INT-A-PAK (3 + 4)
Pake Aparèy Founisè :
Double INT-A-PAK
Dènye nouvèl
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