Infineon Technologies - DF1000R17IE4BOSA1

KEY Part #: K6533655

DF1000R17IE4BOSA1 Pricing (USD) [168PC Stock]

  • 1 pcs$273.90251

Nimewo Pati:
DF1000R17IE4BOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT MODULE 1700V 1000A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Diodes - RF, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies DF1000R17IE4BOSA1 electronic components. DF1000R17IE4BOSA1 can be shipped within 24 hours after order. If you have any demands for DF1000R17IE4BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF1000R17IE4BOSA1 Atribi pwodwi yo

Nimewo Pati : DF1000R17IE4BOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT MODULE 1700V 1000A
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1700V
Kouran - Pèseptè (Ic) (Max) : -
Pouvwa - Max : 6250W
Vce (sou) (Max) @ Vge, Ic : 2.45V @ 15V, 1000A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 81nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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