Diodes Incorporated - DMN2990UFA-7B

KEY Part #: K6420664

DMN2990UFA-7B Pricing (USD) [621734PC Stock]

  • 1 pcs$0.05949
  • 10,000 pcs$0.05286

Nimewo Pati:
DMN2990UFA-7B
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 20V 0.51A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN2990UFA-7B electronic components. DMN2990UFA-7B can be shipped within 24 hours after order. If you have any demands for DMN2990UFA-7B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2990UFA-7B Atribi pwodwi yo

Nimewo Pati : DMN2990UFA-7B
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 20V 0.51A
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 510mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.2V, 4.5V
RD sou (Max) @ Id, Vgs : 990 mOhm @ 100mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.5nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 27.6pF @ 16V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 400mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 3-X2-DFN0806
Pake / Ka : 3-XFDFN