IDW10G65C5XKSA1 Pricing (USD) [16611PC Stock]
- 1 pcs$2.54284
- 10 pcs$2.28194
- 100 pcs$1.86980
- 500 pcs$1.59173
- 1,000 pcs$1.34243
- Nimewo Pati:
- IDW10G65C5XKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- DIODE SCHOTTKY 650V 10A TO247-3. Schottky Diodes & Rectifiers SIC DIODES
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - JFETs, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IDW10G65C5XKSA1 electronic components. IDW10G65C5XKSA1 can be shipped within 24 hours after order. If you have any demands for IDW10G65C5XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDW10G65C5XKSA1 Atribi pwodwi yo
Nimewo Pati :
IDW10G65C5XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE SCHOTTKY 650V 10A TO247-3
Seri :
CoolSiC™
Estati Pati :
Active
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
10A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 10A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
180µA @ 650V
Kapasite @ Vr, F :
300pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
PG-TO247-3
Operating Tanperati - Junction :
-55°C ~ 175°C
Dènye nouvèl
Ou ka enterese tou
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VS-8EWF04S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 8A TO252AA. Diodes - General Purpose, Power, Switching New Input Diodes - D-PAK-e3
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