Vishay Semiconductor Diodes Division - VSSB420S-M3/52T

KEY Part #: K6451067

VSSB420S-M3/52T Pricing (USD) [483789PC Stock]

  • 1 pcs$0.07645
  • 6,000 pcs$0.04731

Nimewo Pati:
VSSB420S-M3/52T
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 200V 1.8A DO214AA. Schottky Diodes & Rectifiers 4A 200V TMBS Rectfr Single Die 150C
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VSSB420S-M3/52T electronic components. VSSB420S-M3/52T can be shipped within 24 hours after order. If you have any demands for VSSB420S-M3/52T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VSSB420S-M3/52T Atribi pwodwi yo

Nimewo Pati : VSSB420S-M3/52T
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 200V 1.8A DO214AA
Seri : TMBS®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 1.8A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.9V @ 4A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 150µA @ 200V
Kapasite @ Vr, F : 120pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -40°C ~ 150°C

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