Taiwan Semiconductor Corporation - HS3M R7G

KEY Part #: K6457368

HS3M R7G Pricing (USD) [470240PC Stock]

  • 1 pcs$0.07866

Nimewo Pati:
HS3M R7G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 1KV 3A DO214AB. Rectifiers 3A,1000V, GP HIGH EFFICIENT SMD RECTIFIER
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Diodes - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation HS3M R7G electronic components. HS3M R7G can be shipped within 24 hours after order. If you have any demands for HS3M R7G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HS3M R7G Atribi pwodwi yo

Nimewo Pati : HS3M R7G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 1KV 3A DO214AB
Seri : -
Estati Pati : Not For New Designs
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 75ns
Kouran - Fèy Reverse @ Vr : 10µA @ 1000V
Kapasite @ Vr, F : 50pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AB, SMC
Pake Aparèy Founisè : DO-214AB (SMC)
Operating Tanperati - Junction : -55°C ~ 150°C

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