Nimewo Pati :
SI5433BDC-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 20V 4.8A 1206-8
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
37 mOhm @ 4.8A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Disipasyon Pouvwa (Max) :
1.3W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
1206-8 ChipFET™
Pake / Ka :
8-SMD, Flat Lead