IRLR6225PBF Pricing (USD) [1367PC Stock]
- 3,000 pcs$0.22804
- Nimewo Pati:
- IRLR6225PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 20V 100A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Tiristors - TRIACs and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLR6225PBF electronic components. IRLR6225PBF can be shipped within 24 hours after order. If you have any demands for IRLR6225PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR6225PBF Atribi pwodwi yo
Nimewo Pati :
IRLR6225PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 20V 100A DPAK
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
4 mOhm @ 21A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs :
72nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
3770pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
63W (Tc)
Operating Tanperati :
-50°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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