Nimewo Pati :
RGP25MHE3/54
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 1KV 2.5A DO201
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
2.5A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 2.5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
500ns
Kouran - Fèy Reverse @ Vr :
5µA @ 1000V
Kapasite @ Vr, F :
60pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-201AD, Axial
Pake Aparèy Founisè :
DO-201AD
Operating Tanperati - Junction :
-65°C ~ 175°C