GeneSiC Semiconductor - 1N3211

KEY Part #: K6425062

1N3211 Pricing (USD) [12474PC Stock]

  • 1 pcs$3.30352
  • 100 pcs$2.38635

Nimewo Pati:
1N3211
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
DIODE GEN PURP 300V 15A DO5. Rectifiers 300V 15A Std. Recovery
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - JFETs and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor 1N3211 electronic components. 1N3211 can be shipped within 24 hours after order. If you have any demands for 1N3211, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N3211 Atribi pwodwi yo

Nimewo Pati : 1N3211
Manifakti : GeneSiC Semiconductor
Deskripsyon : DIODE GEN PURP 300V 15A DO5
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 300V
Kouran - Mwayèn Rèktifye (Io) : 15A
Voltage - Forward (Vf) (Max) @ Si : 1.5V @ 15A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 10µA @ 50V
Kapasite @ Vr, F : -
Mounting Kalite : Chassis, Stud Mount
Pake / Ka : DO-203AB, DO-5, Stud
Pake Aparèy Founisè : DO-5
Operating Tanperati - Junction : -65°C ~ 175°C
Ou ka enterese tou
  • FGD3N60UNDF

    ON Semiconductor

    IGBT 600V 6A 60W DPAK.

  • BAS40E6433HTMA1

    Infineon Technologies

    DIODE SCHOTTKY 40V 120MA SOT23-3.

  • LXA06B600

    Power Integrations

    DIODE GEN PURP 600V 6A TO263AB. Rectifiers X-Series 600V 6A Low Qrr

  • QH05BZ600

    Power Integrations

    DIODE GEN PURP 600V 5A TO263AB. Diodes - General Purpose, Power, Switching Super-Low Qrr. 600V, 5A, Rectifier

  • QH08BZ600

    Power Integrations

    DIODE GEN PURP 600V 8A TO263AB. Diodes - General Purpose, Power, Switching Super-Low Qrr. 600V, 8A, Rectifier

  • VS-20ETS08SPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 20A TO263AB.