FGD3N60UNDF Pricing (USD) [244691PC Stock]
- 1 pcs$0.15192
- 2,500 pcs$0.15116
- Nimewo Pati:
- FGD3N60UNDF
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 600V 6A 60W DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FGD3N60UNDF electronic components. FGD3N60UNDF can be shipped within 24 hours after order. If you have any demands for FGD3N60UNDF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FGD3N60UNDF Atribi pwodwi yo
Nimewo Pati :
FGD3N60UNDF
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 600V 6A 60W DPAK
Seri :
-
Estati Pati :
Active
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
6A
Kouran - Pèseptè batman (Icm) :
9A
Vce (sou) (Max) @ Vge, Ic :
2.52V @ 15V, 3A
Pouvwa - Max :
60W
Oblije chanje enèji :
52µJ (on), 30µJ (off)
Kalite Antre :
Standard
Gate chaje :
1.6nC
Td (on / off) @ 25 ° C :
5.5ns/22ns
Kondisyon egzamen an :
400V, 3A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
21ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
TO-252, (D-Pak)
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