ON Semiconductor - FGD3N60UNDF

KEY Part #: K6424963

FGD3N60UNDF Pricing (USD) [244691PC Stock]

  • 1 pcs$0.15192
  • 2,500 pcs$0.15116

Nimewo Pati:
FGD3N60UNDF
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 6A 60W DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Diodes - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor FGD3N60UNDF electronic components. FGD3N60UNDF can be shipped within 24 hours after order. If you have any demands for FGD3N60UNDF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGD3N60UNDF Atribi pwodwi yo

Nimewo Pati : FGD3N60UNDF
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 6A 60W DPAK
Seri : -
Estati Pati : Active
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 6A
Kouran - Pèseptè batman (Icm) : 9A
Vce (sou) (Max) @ Vge, Ic : 2.52V @ 15V, 3A
Pouvwa - Max : 60W
Oblije chanje enèji : 52µJ (on), 30µJ (off)
Kalite Antre : Standard
Gate chaje : 1.6nC
Td (on / off) @ 25 ° C : 5.5ns/22ns
Kondisyon egzamen an : 400V, 3A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 21ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : TO-252, (D-Pak)