Nimewo Pati :
EGP30G-E3/73
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 400V 3A GP20
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
5µA @ 400V
Mounting Kalite :
Through Hole
Pake / Ka :
DO-201AA, DO-27, Axial
Pake Aparèy Founisè :
GP20
Operating Tanperati - Junction :
-65°C ~ 150°C