BSS314PEH6327XTSA1 Pricing (USD) [929451PC Stock]
- 1 pcs$0.22543
- 10 pcs$0.16295
- 100 pcs$0.09595
- 500 pcs$0.05431
- 1,000 pcs$0.04163
- Nimewo Pati:
- BSS314PEH6327XTSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 30V 1.5A SOT23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSS314PEH6327XTSA1 electronic components. BSS314PEH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSS314PEH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS314PEH6327XTSA1 Atribi pwodwi yo
Nimewo Pati :
BSS314PEH6327XTSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 30V 1.5A SOT23
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
140 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
2V @ 6.3µA
Chaje Gate (Qg) (Max) @ Vgs :
2.9nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
294pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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