FCD2250N80Z Pricing (USD) [152236PC Stock]
- 1 pcs$0.24296
- 5,000 pcs$0.23145
- Nimewo Pati:
- FCD2250N80Z
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 800V 2.6A TO252-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FCD2250N80Z electronic components. FCD2250N80Z can be shipped within 24 hours after order. If you have any demands for FCD2250N80Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCD2250N80Z Atribi pwodwi yo
Nimewo Pati :
FCD2250N80Z
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 800V 2.6A TO252-3
Seri :
SuperFET® II
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.25 Ohm @ 1.3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 260µA
Chaje Gate (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
585pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
39W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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