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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. IXRFSM12N100

IXYS-RF - IXRFSM12N100

KEY Part #: K6397886

IXRFSM12N100 Pricing (USD) [3782PC Stock]

  • 1 pcs$11.45278
Nimewo Pati:
IXRFSM12N100
Manifakti:
IXYS-RF
Detaye deskripsyon:
2A 1000V MOSFET IN SMPD PACKAGE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in IXYS-RF IXRFSM12N100 electronic components. IXRFSM12N100 can be shipped within 24 hours after order. If you have any demands for IXRFSM12N100, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXRFSM12N100 Atribi pwodwi yo

Nimewo Pati : IXRFSM12N100
Manifakti : IXYS-RF
Deskripsyon : 2A 1000V MOSFET IN SMPD PACKAGE
Seri : SMPD
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 15V
RD sou (Max) @ Id, Vgs : 1.05 Ohm @ 6A, 15V
Vgs (th) (Max) @ Id : 5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2875pF @ 800V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 940W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 16-SMPD
Pake / Ka : 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad

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