HER308G A0G Pricing (USD) [428524PC Stock]
- 1 pcs$0.08631
- Nimewo Pati:
- HER308G A0G
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- DIODE GEN PURP 1KV 3A DO201AD. Rectifiers 3A,1000V, GLASS PASS HIGH EFFICIENT RECT
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation HER308G A0G electronic components. HER308G A0G can be shipped within 24 hours after order. If you have any demands for HER308G A0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HER308G A0G Atribi pwodwi yo
Nimewo Pati :
HER308G A0G
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 1KV 3A DO201AD
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
75ns
Kouran - Fèy Reverse @ Vr :
10µA @ 1000V
Kapasite @ Vr, F :
35pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-201AD, Axial
Pake Aparèy Founisè :
DO-201AD
Operating Tanperati - Junction :
-55°C ~ 150°C
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