NTMS4807NR2G Pricing (USD) [233750PC Stock]
- 1 pcs$0.15824
- 2,500 pcs$0.15140
- Nimewo Pati:
- NTMS4807NR2G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 30V 9.1A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTMS4807NR2G electronic components. NTMS4807NR2G can be shipped within 24 hours after order. If you have any demands for NTMS4807NR2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTMS4807NR2G Atribi pwodwi yo
Nimewo Pati :
NTMS4807NR2G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 30V 9.1A 8-SOIC
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6.1 mOhm @ 14.8A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
24nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2900pF @ 24V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
860mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOIC
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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