Nimewo Pati :
BSM50GD170DLBOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 2 LOW POWER ECONO3-1
Estati Pati :
Not For New Designs
Nou konte genyen :
Full Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1700V
Kouran - Pèseptè (Ic) (Max) :
100A
Vce (sou) (Max) @ Vge, Ic :
3.3V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) :
100µA
Antre kapasite (Cies) @ Vce :
3.5nF @ 25V
Operating Tanperati :
-40°C ~ 125°C
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Module