Infineon Technologies - BSM50GD170DLBOSA1

KEY Part #: K6534227

BSM50GD170DLBOSA1 Pricing (USD) [536PC Stock]

  • 1 pcs$86.49540

Nimewo Pati:
BSM50GD170DLBOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 2 LOW POWER ECONO3-1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM50GD170DLBOSA1 Atribi pwodwi yo

Nimewo Pati : BSM50GD170DLBOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 2 LOW POWER ECONO3-1
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Nou konte genyen : Full Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1700V
Kouran - Pèseptè (Ic) (Max) : 100A
Pouvwa - Max : 480W
Vce (sou) (Max) @ Vge, Ic : 3.3V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) : 100µA
Antre kapasite (Cies) @ Vce : 3.5nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module