Vishay Semiconductor Diodes Division - S1K-E3/5AT

KEY Part #: K6433106

S1K-E3/5AT Pricing (USD) [1784418PC Stock]

  • 1 pcs$0.02073
  • 15,000 pcs$0.01511

Nimewo Pati:
S1K-E3/5AT
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 800V 1A DO214AC. Rectifiers 1.0 Amp 800 Volt 30A IFSM @ 8.3ms
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division S1K-E3/5AT electronic components. S1K-E3/5AT can be shipped within 24 hours after order. If you have any demands for S1K-E3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1K-E3/5AT Atribi pwodwi yo

Nimewo Pati : S1K-E3/5AT
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 800V 1A DO214AC
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.8µs
Kouran - Fèy Reverse @ Vr : 5µA @ 800V
Kapasite @ Vr, F : 12pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C

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