Vishay Semiconductor Diodes Division - ES2G-M3/5BT

KEY Part #: K6458051

ES2G-M3/5BT Pricing (USD) [831152PC Stock]

  • 1 pcs$0.04696
  • 9,600 pcs$0.04673

Nimewo Pati:
ES2G-M3/5BT
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 400V 2A DO214AA. Rectifiers 2A,400V,35NS,UF Rect,SMD
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division ES2G-M3/5BT electronic components. ES2G-M3/5BT can be shipped within 24 hours after order. If you have any demands for ES2G-M3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES2G-M3/5BT Atribi pwodwi yo

Nimewo Pati : ES2G-M3/5BT
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 2A DO214AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 10µA @ 400V
Kapasite @ Vr, F : 15pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 150°C

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