Vishay Semiconductor Diodes Division - BYM07-150HE3_A/H

KEY Part #: K6457960

BYM07-150HE3_A/H Pricing (USD) [782736PC Stock]

  • 1 pcs$0.04725

Nimewo Pati:
BYM07-150HE3_A/H
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 150V 500MA DO213. Rectifiers 0.5A,150V,50NS GL34 AEC-Q101 Qualified
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYM07-150HE3_A/H electronic components. BYM07-150HE3_A/H can be shipped within 24 hours after order. If you have any demands for BYM07-150HE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYM07-150HE3_A/H Atribi pwodwi yo

Nimewo Pati : BYM07-150HE3_A/H
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 150V 500MA DO213
Seri : Automotive, AEC-Q101, Superectifier®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 150V
Kouran - Mwayèn Rèktifye (Io) : 500mA
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 500mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 5µA @ 150V
Kapasite @ Vr, F : 7pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AA (Glass)
Pake Aparèy Founisè : DO-213AA (GL34)
Operating Tanperati - Junction : -65°C ~ 175°C

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