NXP USA Inc. - PHP21N06T,127

KEY Part #: K6400138

[3501PC Stock]


    Nimewo Pati:
    PHP21N06T,127
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 55V 21A TO220AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. PHP21N06T,127 electronic components. PHP21N06T,127 can be shipped within 24 hours after order. If you have any demands for PHP21N06T,127, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PHP21N06T,127 Atribi pwodwi yo

    Nimewo Pati : PHP21N06T,127
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 55V 21A TO220AB
    Seri : TrenchMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 55V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 75 mOhm @ 10A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 500pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 69W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220AB
    Pake / Ka : TO-220-3