NXP USA Inc. - PMG370XN,115

KEY Part #: K6400199

[3480PC Stock]


    Nimewo Pati:
    PMG370XN,115
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 30V 0.96A 6TSSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays and Diodes - RF ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. PMG370XN,115 electronic components. PMG370XN,115 can be shipped within 24 hours after order. If you have any demands for PMG370XN,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMG370XN,115 Atribi pwodwi yo

    Nimewo Pati : PMG370XN,115
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 30V 0.96A 6TSSOP
    Seri : TrenchMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 960mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 440 mOhm @ 200mA, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 0.65nC @ 4.5V
    Vgs (Max) : ±12V
    Antre kapasite (Ciss) (Max) @ Vds : 37pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 690mW (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 6-TSSOP
    Pake / Ka : 6-TSSOP, SC-88, SOT-363