Nimewo Pati :
BSG0813NDIATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 25V 19A/33A 8TISON
FET Kalite :
2 N-Channel (Dual) Asymmetrical
Karakteristik FET :
Logic Level Gate, 4.5V Drive
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A, 33A
RD sou (Max) @ Id, Vgs :
3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1100pF @ 12V
Operating Tanperati :
-55°C ~ 155°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TISON-8