Infineon Technologies - BSG0813NDIATMA1

KEY Part #: K6525146

BSG0813NDIATMA1 Pricing (USD) [91750PC Stock]

  • 1 pcs$0.42617
  • 5,000 pcs$0.41930

Nimewo Pati:
BSG0813NDIATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET 2N-CH 25V 19A/33A 8TISON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSG0813NDIATMA1 Atribi pwodwi yo

Nimewo Pati : BSG0813NDIATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET 2N-CH 25V 19A/33A 8TISON
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Asymmetrical
Karakteristik FET : Logic Level Gate, 4.5V Drive
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A, 33A
RD sou (Max) @ Id, Vgs : 3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 12V
Pouvwa - Max : 2.5W
Operating Tanperati : -55°C ~ 155°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerTDFN
Pake Aparèy Founisè : PG-TISON-8