Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 200V 2A POWERMITE
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
10µA @ 200V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Powermite
Operating Tanperati - Junction :
-55°C ~ 150°C