Nimewo Pati :
BYV10ED-600PJ
Manifakti :
WeEn Semiconductors
Deskripsyon :
DIODE GEN PURP 600V 10A DPAK
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
10A
Voltage - Forward (Vf) (Max) @ Si :
2V @ 10A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
DPAK
Operating Tanperati - Junction :
175°C (Max)