IXYS - IXBX55N300

KEY Part #: K6423055

IXBX55N300 Pricing (USD) [1312PC Stock]

  • 1 pcs$34.56218
  • 10 pcs$32.46621
  • 25 pcs$30.99977

Nimewo Pati:
IXBX55N300
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 3000V 130A 625W PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - RF, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXBX55N300 electronic components. IXBX55N300 can be shipped within 24 hours after order. If you have any demands for IXBX55N300, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXBX55N300 Atribi pwodwi yo

Nimewo Pati : IXBX55N300
Manifakti : IXYS
Deskripsyon : IGBT 3000V 130A 625W PLUS247
Seri : BIMOSFET™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 3000V
Kouran - Pèseptè (Ic) (Max) : 130A
Kouran - Pèseptè batman (Icm) : 600A
Vce (sou) (Max) @ Vge, Ic : 3.2V @ 15V, 55A
Pouvwa - Max : 625W
Oblije chanje enèji : -
Kalite Antre : Standard
Gate chaje : 335nC
Td (on / off) @ 25 ° C : -
Kondisyon egzamen an : -
Ranvèse Tan Reverse (trr) : 1.9µs
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : PLUS247™-3