Infineon Technologies - IGB50N60TATMA1

KEY Part #: K6423099

IGB50N60TATMA1 Pricing (USD) [33538PC Stock]

  • 1 pcs$1.22887

Nimewo Pati:
IGB50N60TATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 100A 333W TO263-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Infineon Technologies IGB50N60TATMA1 electronic components. IGB50N60TATMA1 can be shipped within 24 hours after order. If you have any demands for IGB50N60TATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IGB50N60TATMA1 Atribi pwodwi yo

Nimewo Pati : IGB50N60TATMA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 100A 333W TO263-3
Seri : TrenchStop®
Estati Pati : Active
Kalite IGBT : Trench
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 100A
Kouran - Pèseptè batman (Icm) : 150A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 50A
Pouvwa - Max : 333W
Oblije chanje enèji : 2.6mJ
Kalite Antre : Standard
Gate chaje : 310nC
Td (on / off) @ 25 ° C : 26ns/299ns
Kondisyon egzamen an : 400V, 50A, 7 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : PG-TO263-3-2